Bottom electrode for memory device and method of forming the same

ABSTRACT

Contacts having use in an integrated circuit and exemplary methods of forming the contacts are disclosed. The methods involve forming a conductive cap over a metal plug. The invention can mitigate keyholes in the contacts by capping and encapsulating the conductive material used to form the contact. The exemplary cap may be made of a nitride material.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a divisional of U.S. application Ser. No.12/068,317, filed Feb. 5, 2008 now U.S. Pat. No. 7,683,481, which is adivisional of U.S. application Ser. No. 11/207,764, filed Aug. 22, 2005,now U.S. Pat. No. 7,348,238, the entire disclosures of which areincorporated herein by reference.

FIELD OF THE INVENTION

The present invention relates to the field of semiconductor devices and,in particular, to the formation of contacts for memory and otherintegrated circuit devices.

BACKGROUND OF THE INVENTION

A well known semiconductor memory component is random access memory(RAM). RAM permits repeated read and write operations on its memoryelements. Typically, RAM devices are volatile, in that stored data islost once the power source is disconnected or removed. Examples of RAMdevices include dynamic random access memory (DRAM), synchronous dynamicrandom access memory (SDRAM) and static random access memory (SRAM). Inaddition, DRAMS and SDRAMS also typically store data in capacitors,which require periodic refreshing to maintain the stored data.

Recently, resistance variable memory elements, which includeprogrammable conductor random access memory (PCRAM) elements employing achalcogenide material, have been investigated for suitability assemi-volatile and non-volatile random access memory devices. One suchPCRAM device is disclosed in U.S. Pat. No. 6,348,365, assigned to MicronTechnology Inc. and incorporated herein by reference. In typical PCRAMdevices, conductive material, such as silver, is moved within thechalcogenide material to alter the cell resistance. Thus, the resistanceof the chalcogenide material can be programmed to stable higherresistance and lower resistance states. The programmed lower resistancestate can remain intact for a long period, typically ranging from hoursto weeks, after the voltage potentials are removed.

One aspect of fabricating resistance variable memory cells, which alsooccurs in fabrication of other integrated circuit devices, involvescontacts used for connecting the memory cells to integrated circuitryformed several layers beneath the cells. Oftentimes, because of the highaspect ratio of long vias, contacts provided therein have either sharpcorners, keyholes or both, created during the contact formation. Thesharp corners are created by the long, vertical sidewalls of the vias.During plug formation in vias having high aspect ratios, CVD isincapable of filling the vias completely before the plug is closed,resulting in keyhole defects in the plugs. Subsequent chemicalmechanical polishing or etchback fabrication steps can expose the keyand are to create a completely smooth via topography. Additionally, cellmaterial can fall into the keyholes during deposition, leading to anon-uniform cell surface, or worse, a cracks or breaks in the cellsurface, which can cause the cell to malfunction, and effectively limitsthe materials that can be used in the memory cell.

The sharp corners and/or keyholes may also result in inconsistent andunreliable switching of the memory device. Put another way, theseproblems make the cell unable to reliably switch between high and lowresistance states. Such problems also reduce memory device yield and thelifetime of a memory cell is potentially cut short. Therefore, it isimportant in the fabrication of integrated circuit contacts, includingthose employing resistance variable memory cells, to create asmooth-surfaced or faceted conductive plugs on which subsequent materialmay be deposited.

Referring to FIG. 1, a cross sectional view of a portion of aconventional memory device 100 is shown. A dielectric layer 110 containsmetal plugs 120 which connect to lower structures of the memory device100. For purposes of clarity, only one plug 120 is shown. For aresistance variable memory, cell material 140 is formed over thedielectric 110 and plugs 120. As discussed above, however, keyholes 130in the metal plugs 120 can prevent smooth deposition of the cellmaterial 140 and cause interference with the operation of the memorycell 100. Keyholes 130 are very difficult to avoid when employingconventional methods of forming metal plugs 120, such as chemical vapordeposition (“CVD”).

Accordingly, there is a need for conductive contacts mitigate againstformation of keyhole defects. There is also a need and desire forconductive contacts for use in a resistance variable memory device thatcompensate for keyhole and other defects.

BRIEF SUMMARY OF THE INVENTION

Exemplary embodiments of the invention provide contacts having smoothedges for use in an integrated circuit. Exemplary methods of forming thecontacts are also disclosed. The methods involve forming a conductivecap over a metal plug, which encapsulates the conductive material usedto form the contact. The exemplary cap may be made of a conductivenitride material.

In accordance with one exemplary embodiment, the integrated circuit is aresistance variable memory device.

BRIEF DESCRIPTION OF THE DRAWINGS

The above-discussed and other features and advantages of the inventionwill be better understood from the following detailed description, whichis provided in connection with the accompanying drawings; in which:

FIG. 1 is a cross-sectional view of a portion of a conventional memorydevice;

FIG. 2 is a cross-sectional view of a portion of an exemplary memorydevice constructed in accordance with the invention;

FIG. 3 is a cross-sectional view of a portion of the exemplary memorydevice of FIG. 2 during a stage of fabrication;

FIG. 4 is a cross-sectional view of a portion of the exemplary memorydevice of FIG. 2 during a stage of fabrication subsequent to that shownin FIG. 3;

FIG. 5 is a cross-sectional view of a portion of the exemplary memorydevice of FIG. 2 during a stage of fabrication subsequent to that shownin FIG. 4;

FIG. 6( a) is a cross-sectional view of a portion of the exemplarymemory device of FIG. 2 during a stage of fabrication subsequent to thatshown in FIG. 5;

FIG. 6( b) is an isometric view of a portion of another exemplary memorydevice during a stage of fabrication subsequent to that shown in FIG. 5;

FIG. 7 is a cross-sectional view of a portion of the exemplary memorydevice of FIG. 2 during a stage of fabrication subsequent to that shownin FIG. 6;

FIG. 8 is a cross-sectional view of a portion of the exemplary memorydevice during a stage of fabrication subsequent to that shown in FIG. 7;and

FIG. 9 illustrates a computer system having a memory element inaccordance with the invention.

DETAILED DESCRIPTION OF THE INVENTION

In the following detailed description, reference is made to variousspecific embodiments of the invention. These embodiments are describedwith sufficient detail to enable those skilled in the art to practicethe invention. It is to be understood that other embodiments may beemployed, and that various structural, logical and electrical changesmay be made without departing from the spirit or scope of the invention.

The term “substrate” used in the following description may include anysupporting structure including, but not limited to, a semiconductorsubstrate that has an exposed substrate surface. A semiconductorsubstrate should be understood to include silicon, silicon-on-insulator(SOI), silicon-on-sapphire (SOS), doped and undoped semiconductors,epitaxial layers of silicon supported by a base semiconductorfoundation, and other semiconductor structures. When reference is madeto a semiconductor substrate or wafer in the following description,previous process steps may have been utilized to form regions orjunctions in or over the base semiconductor or foundation. The substrateneed not be semiconductor-based, but may be any support structuresuitable for supporting an integrated circuit.

The term “resistance variable memory element” is intended to include anymemory element that exhibits and holds a resistance change in responseto an applied voltage.

The invention is now explained with reference to the figures, whichillustrate exemplary embodiments and where like reference numbersindicate like features. It should be understood that the portions shownare illustrative of one embodiment of the invention, and that theinvention encompasses other memory and non-memory integrated circuitdevices that can be formed using different materials and processes thanthose described herein.

FIG. 2 shows a portion of an array of memory elements which includes amemory cell 200 constructed in accordance with the invention. Adielectric layer 210, formed over a substrate (not shown), containsmetal plugs 220 that serve as bottom electrodes for memory device 200.For purposes of clarity, only one plug 240 is illustrated. Conductivecap 250 is formed over the metal plugs 220, covering and fittingkeyholes 230 and isolating keyholes 230 from cell material 240.Resistance variable cell material 240 is formed over the dielectric 210and cap 250. As shown in FIG. 2, the cap 250 completely cover andencapsulate keyhole defects 230, thereby preventing the irregularitiesin the cell material 240 that occur in the cell material 140 of priorart memory cell 100. It should be understood that cell material 240 willcomprise a plurality of layers of materials used in the formation ofvariable resistance memory cells. Without limiting the invention,exemplary cell layers and materials are described in U.S. Pat. No.6,849,868 to Campbell, which is incorporated herein by reference.

Referring now to FIGS. 3-8, exemplary method steps for forming theexemplary cap 250 in accordance with the invention are now described. Itshould be understood that the description of the materials andfabrication steps are illustrative only.

Turning to FIG. 3, metal plugs 220 are formed within dielectric layer210 by any known process. In accordance with a preferred embodiment, themetal plugs 220 are tungsten and are formed using CVD, but other metalsor conductive materials may also be used. Conventional CVD steps mayleave keyhole defects 230 in the plugs 220.

Referring to FIG. 4, a conductive material layer for forming the cap 250is blanket deposited over the dielectric 210, plugs 220 and keyholes230. The conductive material layer is then planarized by any knownprocess, for example, by chemical mechanical polishing (CMP). This stepmay also be performed by selectively depositing the material over andaround the individual plugs 220. In accordance with a preferredembodiment of the invention, the conductive material is a tungstenalloy, such as, e.g., Ti/TiN/W or TiN/W, which may be deposited byphysical vapor deposition (PVD) or by other known processes.

Next, as shown in FIG. 5, the conductive material for forming the cap250 is coated with a photoresist layer 260. As shown in FIG. 6( a), theconductive material for the cap is then etched using conventionalpatterning techniques to form individual caps 250 over respective plugs220. These conventional techniques include known dry or wet etch methodscompatible with the conductive material of the cap 250. Other exemplaryembodiments include etching the cap 250 to include faceted sides 253, asshown in FIG. 6( b). The faceted sides 253 of cap 250 provide smoothcontact points and have a lower fabrication cost compared to roundedcaps. The photoresist 260 is then removed, as illustrated by FIG. 7,leaving conductive cap 250 exposed.

With reference to FIG. 8, exemplary methods of completing the memorydevice 200 will now be described. Cell material 240 is deposited overthe array. The cell material 240 may include resistance variable cellmaterial, like the materials necessary for construction of PCRAM memorycells constructed according to the teachings of U.S. Pub. Appl. Nos.2003/0155589 and 2003/0045054, each assigned to Micron Technology Inc.,and incorporated herein by reference. Appropriate cell materials includelayers of germanium selenide and silver-containing layers. The memorydevice 200 will also include a plurality of upper electrodes (notshown), each formed over the cell material 240 and over each bottomelectrode 220, 250, defining the memory cell as the portion of the cellmaterial 240 therebetween.

The embodiments described above refer to the formation of a memorydevice 200 structure in accordance with the invention. It must beunderstood, however, that the invention contemplates the formation ofother integrated circuit elements, and the invention is not limited touse with memory devices. Moreover, although described as a single memorydevice 200, the device 200 can be fabricated as a part of a memory arrayand operated with memory element access circuits.

FIG. 9 is a block diagram of a processor-based system 1200, whichincludes a memory circuit 1248, for example a resistance variable memorydevice circuit employing non-volatile memory devices 200 (FIG. 2)fabricated in accordance with the invention. The processor system 1200,such as a computer system, generally comprises a central processing unit(CPU) 1244, such as a microprocessor, a digital signal processor, orother programmable digital logic devices, which communicates with aninput/output (I/O) device 1246 over a bus 1252. The memory circuit 1248communicates with the system over bus 1252 typically through a memorycontroller.

In the case of a computer system, the processor system may includeperipheral devices such as a floppy disk drive 1254 and a compact disc(CD) ROM drive 1256, which also communicate with CPU 1244 over the bus1252. Memory 1248 is preferably constructed as an integrated circuit,which includes one or more resistance variable memory devices 200. Ifdesired, the memory 1248 may be combined with the processor, for exampleCPU 1244, in a single integrated circuit.

The above description and drawings are only to be consideredillustrative of exemplary embodiments which achieve the features andadvantages of the invention. Modification and substitutions to specificprocess conditions and structures can be made without departing from thespirit and scope of the invention. Accordingly, the invention is not tobe considered as being limited by the foregoing description anddrawings, but is only limited by the scope of the appended claims.

1. A memory device comprising: a plurality of resistance variable memorycells, each cell comprising: at least one lower electrode, the lowerelectrode comprising a plug comprising a first conductive materialfilling a via formed in an insulating layer and a conductive capcomprising a second conductive material formed over and in contact withsaid conductive plug and comprising faceted sides, wherein the facetedsides of the conductive cap slope downward from a top surface of the capaway from the center of the conductive plug such that the sides are notperpendicular to the insulating layer.
 2. The device of claim 1, whereinsaid first conductive material comprises tungsten.
 3. The device ofclaim 2, wherein said first conductive material comprises Ti/TiN/W. 4.The device of claim 2, wherein said first conductive material comprisesTiN/W.
 5. The device of claim 1, wherein forming said cap comprisesetching said second conductive material.
 6. The device of claim 1,wherein said cap comprises a plurality of facets on sidewalls of saidcap.
 7. The device of claim 1, wherein said first conductive material isthe same as the second conductive material.
 8. The device of claim 1,wherein each of said first and said second conductive materials comprisetungsten alloys.
 9. The device of claim 8, wherein said secondconductive material comprises Ti/TiN/W.
 10. The device of claim 8,wherein said second conductive material comprises TiN/W.
 11. The deviceof claim 1, wherein said second conductive material comprises nitride.12. The device of claim 1, wherein the at least one memory cell is aPCRAM memory cell.
 13. A memory cell comprising: at least one lowerelectrode, the lower electrode comprising a plug comprising a firstconductive material filling a via formed in an insulating layer and aconductive cap comprising a second conductive material formed over andin contact with said conductive plug and comprising faceted sides,wherein the faceted sides of the conductive cap slope downward from atop surface of the cap away from the center of the conductive plug suchthat the sides are not perpendicular to the insulating layer.
 14. Thememory cell of claim 13, wherein said first conductive materialcomprises one of tungsten, Ti/TiN/W and TiN/W, said second conductivematerial comprises one of Ti/TiN/W and TiN/W and wherein the memory cellfurther comprises a chalcogenide material.
 15. The memory cell of claim13, wherein said first conductive material comprises tungsten.
 16. Thememory cell of claim 15, wherein said first conductive materialcomprises Ti/TiN/W.
 17. The memory cell of claim 15, wherein said firstconductive material comprises TiN/W.
 18. The memory cell of claim 13,wherein forming said cap comprises etching said second conductivematerial.
 19. The memory cell of claim 13, wherein said first conductivematerial is the same as the second conductive material.
 20. The memorycell of claim 13, wherein each of said first and said second conductivematerials comprise tungsten alloys.
 21. The memory cell of claim 20,wherein said second conductive material comprises Ti/TiN/W.
 22. Thememory cell of claim 20, wherein said second conductive materialcomprises TiN/W.
 23. The memory cell of claim 13, wherein said secondconductive material comprises nitride.
 24. The memory cell of claim 13,wherein the memory cell is a PCRAM memory cell.